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CY7C1321BV18 Cypress Semiconductor 1.8V Synchronous Pipelined SRAM

Description • 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) • 300-MHz clock for high bandwidth • 4-Word burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 600MHz) @ 300 MHz • Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches • Echo ...
Features Functional Description
• 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
• 300-MHz clock for high bandwidth
• 4-Word burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces (data transferred at 600MHz) @ 300 MHz
• Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only
• Two input clocks for outpu...

Datasheet PDF File CY7C1321BV18 Datasheet - 447.88KB

CY7C1321BV18  






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