| Description | PROCESS CP287 Power Transistor 8.0 Amp NPN Silicon Power Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 130 x 130 MILS 9.5 MILS 37 x 20 MILS 38 x 20 MILS Al - 45,000Å Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å) GEOMETRY GROSS DIE PER 4 INCH WAFER 974 PRINCIPAL DEVICE T... |
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| Datasheet |
 CP287 Datasheet - 73.57KB |
