| Part Number | PED2311DN |
| Manufacturer | semi one |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The PED2311DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This ... |
| Features |
● VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Sc... |
| Datasheet |
 PED2311DN Datasheet
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