| Part Number | PE2312 |
| Manufacturer | semi one |
| Title | Dual P & N-Channel Enhancement Mode Power MOSFET |
| Description | The PE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This dev... |
| Features |
● P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V ● N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V Application ●PWM applications ●Load switch ●Power management (5)S1 (2)S2 ... |
| Datasheet |
 PE2312 Datasheet
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