| Part Number | PE1011E |
| Manufacturer | semi one |
| Title | P-Channel Enhancement Mode Power MOSFET |
| Description | The PE1011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This de... |
| Features |
● VDS = -20V,ID =-0.6A RDS(ON) <700mΩ @ VGS=-4.5V RDS(ON) <860mΩ @ VGS=-2.5V ● High Power and current handing capability ● Lead free product is acquired ● Gate-Source ESD Protection Application ●Battery operated Systems ●Load/ power Switching Cell Ph... |
| Datasheet |
 PE1011E Datasheet
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