| Part Number | PE025N03 |
| Manufacturer | semi one |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The PE025N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of app... |
| Features |
● VDS =20V,ID =110A RDS(ON) <2.0 mΩ @ VGS=4.5V RDS(ON) <2.5mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good hea... |
| Datasheet |
 PE025N03 Datasheet
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