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PE0106R

semi one
Part Number PE0106R
Manufacturer semi one
Title N-Channel Enhancement Mode Power MOSFET
Description The PE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appl...
Features
● VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation Application
● Power switching application
● Ha...

Datasheet PDF File PE0106R Datasheet

PE0106R   PE0106R   PE0106R  




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