| Part Number | GTVA263202FC |
| Manufacturer | Wolfspeed |
| Title | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| Description | The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier appli... |
| Features |
input matching, high efficiency, and a thermallyenhanced surface-mount package with earless flange.
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA,
ƒ = 2690 MHz 3GPP WCDMA si...
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| Datasheet |
 GTVA263202FC Datasheet
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