| Part Number | GTRA360502M |
| Manufacturer | Wolfspeed |
| Title | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| Description | The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifiers. The device has been designed t for use in c... |
| Features |
• GaN on SiC HEMT technology • Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ • Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs bandwidth, 10% duty cycle (Doherty configuration) - Output power at P3dB = 50 W - Drain ... |
| Datasheet |
 GTRA360502M Datasheet
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