| Part Number | WFN1N60C |
| Manufacturer | Winsemi |
| Title | Power MOSFET |
| Description | Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology. This latest technology has been especially designed to... |
| Features |
� 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFN1N60C Silicon N-Channel MOSFET General Description Th is Power MO SFET is ... |
| Datasheet |
 WFN1N60C Datasheet
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