Part Number | PFU2N65 |
Manufacturer | Wing On |
Title | N-Channel MOSFET |
Description | July 2008 PFU2N65 / PFD2N65 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitan... |
Features |
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 9.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 Ω (Typ...
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Datasheet | PFU2N65 Datasheet |