logo

PFU2N65

Wing On
Part Number PFU2N65
Manufacturer Wing On
Title N-Channel MOSFET
Description July 2008 PFU2N65 / PFD2N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitan...
Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 9.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.2 Ω (Typ...

Datasheet PDF File PFU2N65 Datasheet

PFU2N65   PFU2N65   PFU2N65  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map