| Part Number | VS-3C10ET07T-M3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Title | 650V Power SiC Gen 3 Merged PIN Schottky Diode |
| Description | / APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard swit... |
| Features |
• Majority carrier diode using Schottky technology on SiC wide band gap material • Improved VF and efficiency by thin wafer technology • Positive VF temperature coefficient for easy paralleling • Virtually no recovery tail and no switching losses • T... |
| Datasheet |
 VS-3C10ET07T-M3 Datasheet
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