| Description | The VOS627A series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat package. It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electric... |
| Features |
• High CTR with low input current A/C 1 4 C • Low profile package (half pitch) • High collector emitter voltage VCEO = 80 V • Isolation test voltage = 3750 VRMS • Low coupling capacitance • High common mode transient immunity C/A 2 3 E 22628-1 DESCRIPTION The VOS627A series has a GaAs infrared emitting diode emitter, which is optically coupl... |
| Datasheet |
 VOS627A-4X001T Datasheet - 152.12KB |
