| Part Number | VB20120C-M3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Title | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| Description | www.vishay.com VB20120C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 ... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com... |
| Datasheet |
 VB20120C-M3 Datasheet
|
