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TTS3816B4E

TwinMOS
Part Number TTS3816B4E
Manufacturer TwinMOS
Title 2M x 16Bit x 4 Banks synchronous DRAM
Description The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits, fabricated with M’tec high ...
Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four-banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All ...

Datasheet PDF File TTS3816B4E Datasheet

TTS3816B4E   TTS3816B4E   TTS3816B4E  




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