| Part Number | TGF2023-02 |
| Manufacturer | TriQuint Semiconductor |
| Title | 12 Watt Discrete Power GaN on SiC HEMT |
| Description | The TriQuint TGF2023-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-02 is designed using TriQuint’s proven 0.2... |
| Features |
• • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.92 x 0.10 mm Prim... |
| Datasheet |
 TGF2023-02 Datasheet
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