| Part Number | TC2997G |
| Manufacturer | Transcom |
| Title | GaAs Power FETs |
| Description | The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The flange ceramic package provides the best t... |
| Features |
16 W Typical Power at 3.5 GHz 9 dB Typical Linear Power Gain at 3.5 GHz High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested Flange Ceramic Package Suitable for WiMax and WLL appli... |
| Datasheet |
 TC2997G Datasheet
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