logo

TC2997C

Transcom
Part Number TC2997C
Manufacturer Transcom
Title GaAs Power FETs
Description The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange cera...
Features
• 20 W Typical Power at 2.1 GHz
• 12 dB Typical Linear Power Gain at 2.1 GHz
• High Linearity: IP3 = 52 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Wg = 50 mm
• 100 % DC and RF Tested ...

Datasheet PDF File TC2997C Datasheet

TC2997C   TC2997C   TC2997C  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map