logo

TC2996B

Transcom
Part Number TC2996B
Manufacturer Transcom
Title GaAs Power FETs
Description The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange cera...
Features
• 12 W Typical Power at 1.9 GHz
• 13 dB Typical Linear Power Gain at 1.9 GHz
• High Linearity: IP3 = 50 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Lg = 1 µm, Wg = 30 mm
• 100 % DC and ...

Datasheet PDF File TC2996B Datasheet

TC2996B   TC2996B   TC2996B  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map