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TIM6472-35SL

Toshiba Semiconductor
Part Number TIM6472-35SL
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title MICROWAVE POWER GaAs FET
Description FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 45.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN G1dB= 8.0dB at 6.4GHz to 7.2GHz ・LOW INTERMOD...
Features ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 45.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN G1dB= 8.0dB at 6.4GHz to 7.2GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWE...

Datasheet PDF File TIM6472-35SL Datasheet

TIM6472-35SL   TIM6472-35SL   TIM6472-35SL  




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