logo

TIM5964-60SL

Toshiba Semiconductor
Part Number TIM5964-60SL
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title MICROWAVE POWER GaAs FET
Description FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 48.0dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 8.5dB at 5.9GHz to 6.4GHz ・LOW INTERMOD...
Features ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 48.0dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 8.5dB at 5.9GHz to 6.4GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWE...

Datasheet PDF File TIM5964-60SL Datasheet

TIM5964-60SL   TIM5964-60SL   TIM5964-60SL  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map