| Part Number | TIM5964-30SL |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | MICROWAVE POWER GaAs FET |
| Description | MICROWAVE POWER GaAs FET www..com MICROWAVE SEMICONDUCTOR TIM5964-30SL TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-... |
| Features |
n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE
RF PERFORM...
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| Datasheet |
 TIM5964-30SL Datasheet
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