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TIM5359-45SL

Toshiba Semiconductor
Part Number TIM5359-45SL
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title MICROWAVE POWER GaAs FET
Description FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ・HIGH GAIN G1dB= 9.0dB at 5.3GHz to 5.9GHz ・LOW INTERMOD...
Features ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ・HIGH GAIN G1dB= 9.0dB at 5.3GHz to 5.9GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWE...

Datasheet PDF File TIM5359-45SL Datasheet

TIM5359-45SL   TIM5359-45SL   TIM5359-45SL  




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