| Part Number | GT8G131 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm · · · · · Supplied in Compa... |
| Features |
03-18
GT8G131
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time T...
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| Datasheet |
 GT8G131 Datasheet
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