| Part Number | GT80J101A |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel IGBT |
| Description | GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode ... |
| Features |
n VGE = ±25 V, VCE = 0 VCE = 600 V, VGE = 0 VCE = 5 V, IC = 80 mA IC = 10 A, VGE = 15 V IC = 80 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz
Weight: 9.75 g (typ.)
Min ¾ ¾ 3.0 ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ 2.4 5500 0.3 0.5 0.25 0.7 ¾ Max ±500 1.0 6.0 2.0 3.0 ¾ ...
|
| Datasheet |
 GT80J101A Datasheet
|
