| Part Number | GT60J322 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel IGBT |
| Description | GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm • • ... |
| Features |
everse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Symbol IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr 5Ω ton tf toff VF trr Rth (j-c) Rth (j-c) 15 V 0 −15 V IF = 60 A, VGE = 0 IF = 60 A, VGE = 0, di/dt = −100 A/µs ...
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| Datasheet |
 GT60J322 Datasheet
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