| Part Number | GT5G102 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel IGBT |
| Description | GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation ... |
| Features |
ES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) Test Condition VGE = 20 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 130 A, VGE = 12 V (pulsed) VCE = 10 V, VGE = 0, f = 1 MHz 51 W 2.3 9 12 V 0 VIN: tr < = 100 ns tf < = 100 ns Duty c...
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| Datasheet |
 GT5G102 Datasheet
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