| Part Number | GT40G121 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel IGBT |
| Description | GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applic... |
| Features |
±25 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz 3.33 9 39 W
Weight: 2 g (typ.)
Min ¾ ¾ 3.0 ¾ ¾
Typ. ¾ ¾ ¾ 1.8 3900 0.33 0.43 0.30 0.54 ¾
Max ±500 1.0 6.0 2.5 ¾
Unit nA mA V V pF
¾ ...
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| Datasheet |
 GT40G121 Datasheet
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