| Part Number | GT30J101 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel IGBT |
| Description | GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm • • •... |
| Features |
= 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 30 A VGG = ±15 V, RG = 43 Ω (Note1) Min 5.0 Typ. 2.1 2200 0.12 0.40 0.15 0.70 Max ±500 1.0 8.0 2.7 U...
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| Datasheet |
 GT30J101 Datasheet
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