| Part Number | GT25Q102 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel IGBT |
| Description | GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm The 3rd Generation ... |
| Features |
VCE = 1200 V, VGE = 0 IC = 2.5 mA, VCE = 5 V IC = 25 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Inductive Load VCC = 600 V, IC = 25 A VGG = ±15 V, RG = 43 W (Note1) Min ¾ ¾ 4.0 ¾ ¾ Typ. ¾ ¾ ¾ 2.1 1360 0.10 0.30 0.16 0.68 ¾ Max ±500 1.0 7.0 2.7 ¾ U...
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| Datasheet |
 GT25Q102 Datasheet
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