| Part Number | C2669 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | 2SC2669 |
| Description | 2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm · High power ... |
| Features |
IC = 2 mA
VCE (sat) VBE
IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA
fT Cob Cc･rbb’
Gpe
VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 10.7 MHz (Figure 1)
Note: hFE classification...
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| Datasheet |
 C2669 Datasheet 291.14KB |
