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60N321

Toshiba Semiconductor
Part Number 60N321
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title GT60N321
Description GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit...
Features ay cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing t...

Datasheet PDF File 60N321 Datasheet

60N321   60N321   60N321  




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