| Part Number | TRS10E65F |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | SiC Schottky Barrier Diode |
| Description | SiC Schottky Barrier Diode TRS10E65F 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converte... |
| Features |
(1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ.) (4) The reverse current is small. : IR = 0.5 µA (Typ.)
3. Packaging and Internal Circuit
TRS10E65F
TO-...
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| Datasheet |
 TRS10E65F Datasheet
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