| Part Number | TPN4R712MD |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon P-Channel MOSFET |
| Description | MOSFETs Silicon P-Channel MOS (U-MOS) TPN4R712MD 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Lo... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)
3. Packaging and Internal Circuit
TPN4R712MD...
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| Datasheet |
 TPN4R712MD Datasheet
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