| Part Number | TIM8596-4 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | MICROWAVE POWER GaAs FET |
| Description | FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 7.5dB at 8.5GHz to 9.6GHz ･HERMETICALLY... |
| Features |
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN
G1dB= 7.5dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM8596-4
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS ...
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| Datasheet |
 TIM8596-4 Datasheet
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