| Part Number | SGM2013N |
| Manufacturer | Sony Corporation |
| Title | GaAs N-channel Dual-Gate MES FET |
| Description | The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications in... |
| Features |
• Ultra-small package • Low voltage operation • Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz • High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz • High stability • Built-in gate protection diode Application UHF-band h... |
| Datasheet |
 SGM2013N Datasheet
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