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BUZ357

Siemens Semiconductor Group
Part Number BUZ357
Manufacturer Siemens Semiconductor Group
Title Power Transistor
Description BUZ 357 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 357 VDS 1000 V ID 5.1 ...
Features min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 1000 3 10 10 1.7 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100...

Datasheet PDF File BUZ357 Datasheet 68.99KB

BUZ357   BUZ357   BUZ357  




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