| Part Number | BUZ357 |
| Manufacturer | Siemens Semiconductor Group |
| Title | Power Transistor |
| Description | BUZ 357 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 357 VDS 1000 V ID 5.1 ... |
| Features |
min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
1000 3 10 10 1.7 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100...
|
| Datasheet |
 BUZ357 Datasheet 68.99KB |
