| Part Number | BUZ342 |
| Manufacturer | Siemens Semiconductor Group |
| Title | Power Transistor |
| Description | BUZ 342 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temp... |
| Features |
tics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
50 3 0.1 1 10 10 0.007 4 1 100 100 100
V
VGS = 0 V, ID = 0.25 mA, Tj = -40 °C
Gate threshold...
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| Datasheet |
 BUZ342 Datasheet 214.22KB |
