| Part Number | BUZ11S2 |
| Manufacturer | Siemens Semiconductor Group |
| Title | Power Transistor |
| Description | BUZ 11 S2 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 ... |
| Features |
25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
60 3 0.1 10 10 0.03 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS,...
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| Datasheet |
 BUZ11S2 Datasheet
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