| Part Number | BSM50GD60DN2E3226 |
| Manufacturer | Siemens Semiconductor Group |
| Title | IGBT |
| Description | BSM50GD60DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base ... |
| Features |
N2E3226
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.1 2.2 6.5 2.7 2.8
V
VGE = VCE, IC = 1 mA
Collector-emitter s...
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| Datasheet |
 BSM50GD60DN2E3226 Datasheet
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