| Part Number | BSM35GB120DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Title | IGBT |
| Description | BSM 35 GB 120 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Doubled diode area • Package with insu... |
| Features |
2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.7 3.3 0.6 2.4 6.5 3.2 3.9
V
VGE = VCE, IC = 1.2 mA
Collector-emitt...
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| Datasheet |
 BSM35GB120DN2 Datasheet
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