| Part Number | BSM100GB170DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Title | IGBT |
| Description | BSM 100 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base pla... |
| Features |
B 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.8 5.5 3.4 4.5 0.8 3.2 6.2 3.9 5.3
V
VGE = VCE, IC = 8 mA
Collector...
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| Datasheet |
 BSM100GB170DN2 Datasheet
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