| Part Number | BF1012 |
| Manufacturer | Siemens Semiconductor Group |
| Title | Silicon N-Channel MOSFET Tetrode |
| Description | BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabil... |
| Features |
eter min. DC characteristics Drain-source breakdown voltage typ. 10 0.9 max. 12 16 60 50 500 -
Unit
V(BR)DS
±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS
16 8 10 8 -
V
I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage
±I G1S = ...
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| Datasheet |
 BF1012 Datasheet
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