| Part Number | BAR81W |
| Manufacturer | Siemens Semiconductor Group |
| Title | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
| Description | BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion lo... |
| Features |
C characteristics Diode capacitance
CT
0.6 0.57 0.7 0.15 -
pF
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz
Forward resistance
rf Ls
Ω nH
IF = 5 mA, f = 100 MHz
Series inductance
Configuration of the shunt-diode
- A perfect ground is essential for o...
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| Datasheet |
 BAR81W Datasheet
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