| Part Number | K91G08Q0M |
| Manufacturer | Samsung semiconductor |
| Title | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| Description | The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead ... |
| Features |
D Endstackable to 2.54 mm (0.1’) spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) selected into
groups
Coll.
Emitter
D Low temperature coefficient of CTR D Wide ambient temp...
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| Datasheet |
 K91G08Q0M Datasheet
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