Part Number | STPSC2H12-Y |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Title | 2A power Schottky silicon carbide diode |
Description | The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material ... |
Features |
• AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component Applications • Bootstrap functi... |
Datasheet | STPSC2H12-Y Datasheet |