| Part Number | STPSC12065 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | 650V power Schottky silicon carbide diode |
| Description | The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material ... |
| Features |
• No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ... |
| Datasheet |
 STPSC12065 Datasheet
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