Part Number | STGYA75H120DF2 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Title | IGBT |
Description | This device is IGBT developed using an advanced proprietary trench gate fieldstop structure. This device is part of the H series of IGBTs, which r... |
Features |
• Maximum junction temperature: TJ = 175 °C • 5 μs of short-circuit withstand time • VCE(sat) = 2.1 V (typ.) @ IC = 75 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast recovery antipara... |
Datasheet | STGYA75H120DF2 Datasheet |