| Part Number | STGYA50M120DF3 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | IGBT |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which re... |
| Features |
• Maximum junction temperature: TJ = 175 °C • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recover... |
| Datasheet |
 STGYA50M120DF3 Datasheet
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