| Part Number | STGYA50H120DF2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | IGBT |
| Description | This device is IGBT developed using an advanced proprietary trench gate fieldstop structure. This device is part of the H series of IGBTs, which r... |
| Features |
• Maximum junction temperature: TJ = 175 °C • 5 μs of short-circuit withstand time • Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast recovery anti... |
| Datasheet |
 STGYA50H120DF2 Datasheet
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